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Beilstein J. Nanotechnol. 2016, 7, 1492–1500, doi:10.3762/bjnano.7.142
Figure 1: X-ray diffractograms of Ge:SiO2 thin films deposited at 300, 400 and 500 °C.
Figure 2: HRTEM images of the Ge:SiO2 thin film co-deposited on a Si substrate at 500 °C: (a) corresponding S...
Figure 3: Schematic of sample structure and electrical measurement.
Figure 4: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...
Figure 5: The charge carriers transport mechanism described schematically.
Figure 6: Current density versus voltage characteristics in dark (empty squares) or under integral light (fil...
Figure 7: Photodetector responsiveness: a) spectral photoresponsivity, for Al/n-Si/Ge:SiO2/ITO and Al/n-Si/SiO...
Figure 8: Photovoltaic response speed of the photodetector structure (fabricated at 400 °C) under pulsed (Pin...